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                  BAS521 All information provided in this document is subject to legal disclaimers. ? NXP B.V. 2010. All rights reserved. Product data sheet Rev. 2 — 5 November 2010 3 of 11 NXP Semiconductors BAS521 Single high-voltage switching diode 6. Thermal characteristics [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Reflow soldering is the only recommended soldering method. [3] Soldering point of cathode tab. 7. Characteristics [1] Pulse test: tp = 300 μs; δ =0.02. [2] When switched from IF = 30 mA to IR =30mA; RL = 100 Ω; measured at IR =3mA. Table 6. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Rth(j-a) thermal resistance from junction to ambient in free air [1][2] - - 500 K/W Rth(j-sp) thermal resistance from junction to solder point [3] - - 120 K/W Table 7. Characteristics Tamb =25°C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit VBR breakdown voltage IR = 100 μA 300 340 - V VF forward voltage IF =100mA [1] - 0.95 1.1 V IR reverse current VR = 250 V - 30 150 nA VR =250V; Tamb =150°C - 40 100 μA Cd diode capacitance f = 1 MHz; VR = 0 V - 0.4 5 pF trr reverse recovery time [2] - 1650ns |